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The continued scaling of CMOS devices to the sub-16 nm technology node will likely be achieved with new architectures, such as FinFETs, and new materials, such as high mobility substrates (Ge and/or III-V based). At these technology nodes, abrupt channel doping profiles with high dopant activation will be needed under reduced thermal budget environments. While advanced dopant incorporation and activation...
We investigated the influence of extremely high doping concentrations on the sheet resistance of ion implants annealed by FLA. As the implant depth was ultra-shallow and the amount of dopant atoms high, the concentration of dopant near the surface was exceedingly high, above the solid solubility limit, resulting in high Rs. The cause of this is mainly due to the formation of clusters, which was confirmed...
We have carried out molecular dynamics simulations of monatomic B and octadecaborane cluster implantations into Si in order to make a comparative study and determine the advantages and drawbacks of each approach when used to fabricate shallow junctions. We have simulated a total of 1000 cascades of monatomic boron and an equivalent of 56 cascades of octadecaborane in order to have good statistics...
Superjunction devices are nowadays fabricated based on multi-epitaxy depositions of n-type layers and subsequent masked p-implantations. Improving the performance of the devices requires the optimization of the fabrication process. In this paper, two new approaches to the superjunction technology, based on proton implantations and on the implantation of boron at a very high energies, have been characterized...
A method of using shallow junctions and a low substrate doping concentration in 0.1- to 0.2-/spl mu/m MOSFETs has been developed. An Sb /spl delta/-doping technique is used to form extremely shallow (x/sub j/<20 nm) junctions. A 0.17-/spl mu/m n-MOSFET can be operated with a peak substrate-doping concentration of 1/spl times/10/sup 17/ cm/sup -3/. This approach reduces the junction capacitance,...
This paper reports a 0.18 /spl mu/m Ti-salicided p-MOSFET with shallow junctions fabricated by rapid thermal processing (RTP) in an NH/sub 3/ ambient and low energy boron implantation. It is found that the nitrogen atoms induced by the RTP in an NH/sub 3/ ambient diffuse into the substrate in source/drain regions and suppress the diffusion of boron ions. This new process allows the improved short...
We have developed the first ever low-energy, high-dosage boron ion implantation technology using a decaborane (B/sub 10/H/sub 14/) molecule. Since B/sub 10/H/sub 14/ consists of ten boron atoms, they are implanted with about a one-tenth lower effective acceleration energy and a ten times higher effective beam current compared with those of boron. Using this implantation, we achieved an ultra-shallow...
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