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We reported transport characterization on [112̅0]GaN single nanowire (SNW)-MOSFET laterally- and directionally-grown on (0001) sapphire substrates. The 60nm-dia. Ga2O3/GaN SNW-MOSFET of 0.1μm gate length was shown to exhibit a saturation current of 160μA, current on/off ratio of 105, swing of 85mV/dec, transconductance of 85μS, and unity current gain bandwidth ft at 95GHz. From a 3D diffusion and...
The cross-sectional shape of the stacked silicon nanowires (SiNWs) formed by the Bosch process and stress-limited oxidation is studied in this paper. Under the condition of high temperature oxidation, the resulting nanowires highly resemble the initial shaped resulting by the Bosch process. The effects of etching and passivation in the Bosch process is modeled to provide a guideline to control the...
One of the most promising architectures of third generation solar cells is integration of single crystalline nanowires as electron transporters in anodes of electrochemical cells. The nanowire-based cells aim at significantly increase cell efficiency thanks to the higher mobility of electrons along the single crystalline lattice of the nanowires with respect to traditional polycrystalline networks,...
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