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Lifetime of power electronics is seriously limited by the thermal ambience and therefore a detailed thermal design on power electronics is desirable. For evaluating the lifetime of power electronics, information is required on the thermal cycling of the power electronics components. Especially the semiconductors are vulnerable to a high temperature and thermal cycling. In this paper the combined modeling...
The power electronics circuits are seriously limited by the thermal ambience and therefore a detailed thermal design on power electronics is desirable. Especially the semiconductors are vulnerable to a high temperature and thermal cycling. The overview of power semiconductors switches as an effects of temperature are shown in this paper. In this paper the combined modeling and simulation of electrical...
This article presents the development and implementation of a model for a silicon carbide PiN diode based on the physics of the semiconductor. The main novelty in this paper is modelling with Pspice the real stored charge inside SiC PiN diodes depending on the working regime of the device (turn-on, on-state, and turn-off). By means of this methodology a set of differential equations that models the...
This paper proposes one possible method for modelling silicon based RF meander type inductors. Based on the presented electrical model specialised software (Helix Meta2) for obtaining inductor electrical parameters is developed. In order to verify simulation results test inductor structures are fabricated in the standard silicon technology. Their characteristics simulated with Helix Meta2 are compared...
The paper deals with the problem of modelling d.c. characteristics of silicon power Schottky diodes with thermal effects taken into account. The electrothermal model of the investigated diodes was formulated for SPICE and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of a selected Schottky diode.
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