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Graphene Nanoribbon FETs and Graphene Nanoribbon Tunnel FETs channel current models are simulated in MATLAB followed by implementation in PSpice as equivalent circuit models. Several characteristics of these transistors are compared to those of MOSFETs, keeping identical gate length of 20 nm for performance analysis. Based on the simulation results, it is found that graphene based transistors exhibit...
In recent years the simulation tools have been optimized for precise modelling and simulation for their special purpose. Therefore the simulation tools have been developed to model and simulate a certain problem. In the past, the hardware was used to be modeled in a SPICE simulator, the software in a signal and differential equation based simulator. Nowadays the investigated systems are decreasingly...
This article presents the development and implementation of a model for a silicon carbide PiN diode based on the physics of the semiconductor. The main novelty in this paper is modelling with Pspice the real stored charge inside SiC PiN diodes depending on the working regime of the device (turn-on, on-state, and turn-off). By means of this methodology a set of differential equations that models the...
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