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Atomic layer deposition of high-k dielectrics is currently identified to be an enabling technology for a variety of applications. An overview of the characteristics of the technique is presented and its limiting factors and opportunities discussed. Particular attention is paid to Al2O3 and HfO2 films deposited on silicon in terms of material and electrical characteristics for their use in MEMS and...
Tetrakis (diethylamino) hafnium and tetrakis (diethylamino) titanium were used for the atomic layer deposition (ALD) of HfO2 and TiO2 films on silicon (100) substrates with water being the oxidant. Studies on the decomposition temperatures of both metal precursors within the reactor and on carbon impurity helped determine the optimal ALD temperature range. X-ray photoelectron spectroscopy showed that...
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