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This paper presents a design procedure for a wideband 6–18-GHz monolithic microwave integrated circuit high-power amplifier (HPA) in 0.25-$\mu \text{m}$ AlGaAs-InGaAs pHEMT technology. The design is mainly focused on the realization of the passive circuits to provide the required low-loss and wideband impedance transformation networks. The two-stage GaAs HPA achieves an average output power of 39...
This paper focuses on the design of frequency doublers operating in the RF and microwave frequency ranges. To reject the fundamental and third harmonic signal over a broadband frequency range, an active balun was employed in the broadband frequency doubler which has resulted in fundamental signal and third harmonics signal rejection better than 12 dB from 12 to 30 GHz input frequency. More than 9...
This paper presents a single-chip 60 GHz to 120 GHz frequency multiplier chain based on 0.1 mum GaAs mHEMT. The MMIC can deliver 3 to 5 dBm of output power from 110 GHz to 130 GHz with 2 dBm input power and consumes only 65 mW of DC power. The signal at the fundamental frequency is suppressed more than 20 dB over the band of interest. The impedance matching networks are realized using coupled transmission...
This paper presents a compact size frequency doubler using an artificial transmission line design approach. The multiplier features conversion gain and high fundamental signal rejection. The frequency multiplying is employing the current combining push-push technique. Two GaAs FETs are driven by 900 MHz anti-phase signals from a simple LHM-TL phase shifter instead of the conventional balun/power divider...
A high intercept points, cost-effective, and power-efficient switching FET double balanced mixer (DBM) is reported. The Switching FET DBM demonstrated in this work offers input intercept points (IIP3) and conversion loss typically 44 dBm and 8.5 dB respectively with 15 dBm LO power for the frequency band (RF: 900-2150 MHz, LO: 850-1950 MHz, IF: 50-200 MHz). The measured interport isolation is typically...
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