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Polarities of plasma charging damage in n- and p-channel MOSFETs with Hf-based high-k gate stack (HfAlOx/SiO2) were studied for two different plasma sources (Ar-and Cl-based gas mixtures), and found to depend on plasma conditions, in contrast to those with conventional SiO2. For Ar-plasma, which was confirmed to induce a larger charging damage, both n- and p-ch MOSFETs with high-k gate stacks suffer...
This paper describes techniques and methods used to realize a seventh order switched capacitor low pass filter in SIMOX technology. The filter has bessel characteristic and a 3dB-bandwidth of 20Hz at a clock frequency of 100kHz. Special design of transistors and transmission gates results in drastically reduced leakage currents. The power supply voltage is 10V. The temperature range is extended up...
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