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We have investigated at the first time an all-optical switch using self-assembled InAs/GaAs quantum dots (QDs) within a vertical cavity structure. The optical nonlinearity of the QD switch has been optimized by an asymmetric cavity to achieve the maximum differential reflectivity. Optical switching via QD excited states exhibits a fast decay with a time constant down to 23 ps and a wavelength tunability...
Optoelectronic devices based on single, self-assembled semiconductor quantum dots are attractive for applications in secure optical communications, quantum computation and sensing. In this paper we show how it is possible to dictate the nucleation site of individual InAs/InP quantum dots using a directed self-assembly process, to control the electronic structure of the nucleated dots and also how...
We propose an all-optical switch based on selfassembled InAs/GaAs quantum dots (QDs) within a vertical cavity. Two essential aspects of this novel device have been investigated, which includes the QD/cavity nonlinearity with appropriately designed mirrors and the intersubband carrier dynamics inside QDs. Vertical-reflection-type switches have been fabricated with an asymmetric cavity that consists...
Self-assembled quantum dots (QDs) with broadband emitting spectra, QD superluminescent diodes (SLDs) and external cavity tunable QD laser have been studied. By optimizing growth parameters and sample structure of InAs QDs, up to 150-nm photoluminescence width is achieved. High-power InAs/GaAs QD-SLDs with the CW output power of 200 mW and the spectral bandwidth of near 60 nm have been obtained at...
A scanning Fabry-Perot cavity is used to measure the photoluminescence of InAs/GaAs self-assembled quantum dots with linewidths as low as 1 GHz. This cavity is subsequently locked to the dot emission using PI control.
We investigate the growth of positioned InAs/InP quantum dots for incorporation into InP-based photonic crystal microcavities. The optical properties of these quantum dots and the photonic crystal microcavities are described, as well as the effect of a lateral electric field on biexciton binding energy. This system is proposed as a scalable route to single and entangled photon pair sources at telecommunications...
We report on strong coupling between a discrete optical mode of a high-Q micropillar cavity and single excitons of self assembled In0.43Ga0.57As quantum dots and compare the results with previous studies on In0.3Ga0.7As quantum dots.
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