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A monolithically SOA-integrated EAM using InGaAs self-assembly quantum dot has been demonstrated for the first time. By integrating 300μm long EAM with 375μm long SOA, 3.5dB extinction ratio driven by 6V with 3dB optical gain are obtained, indicating a great potential for high-efficient modulation.
The effects of carrier dynamics on the frequency response of self-assembled quantum dot laser (SA-QDL) are presented. The phonon bottleneck effect on modulation response is simulated. It is shown that to prevent the effect of phonon bottleneck on the frequency behaviour, carrier relaxation lifetime must be less than a certain critical value which is in agreement with the experimental results. Results...
Photonic crystal (PC) cavities enable localization of light into volumes (V) below a cubic optical wavelength (smaller than any other types of optical resonators) with high quality (Q) factors. This permits a strong interaction of light and matter, which is relevant for construction of classical light sources with improved properties (e.g., low threshold lasers) and of nonclassical light sources (such...
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