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This paper addresses failure analysis of electromagnetic field stress effects on SiGe HBTs reliability issues, examining the relation ship between the stress-induced current and device structure degradations. The origin of leakage currents in failed transistors has been studied by complementary failure analysis techniques. Characterization of the structure after aging was performed by Transmission...
The use of organic materials in making polymeric insulators has many advantages. However, it also has a draw back that organic compounds degrade in outdoor environment by many factors. The major issue is that how long they will perform satisfactorily before the end of their useful life. This paper present the result of multistress lab aging on HTV SiR insulators. The environment used was of Islamabad,...
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