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This paper presents a dual-band low-noise amplifier (DB-LNA) with switching band groups for WiMedia Ultra-Wideband. The LNA is designed and implemented in TSMC 0.18 μm RF CMOS technology. Measurement results show that the DB-LNA gives 6.1 dB and 9.8 dB power gain, and that input and output matching are lower than -9.3dB/-9.4dB (Group-1/Group-6) and -9.2dB/-11.7dB (Group-1/Group-6). A minimum noise...
In this paper, a low power low-noise amplifier (LNA) using inductor-coupling resonated technique is designed for ultra-wideband (UWB) wireless system. The design consists of a wideband input impedance matching network, one stage cascode amplifier with inductor-coupling resonated load, and an output buffer; it was fabricated in TSMC 0.18 um standard RF CMOS process. The UWB LNA gives 10.8 dB power...
A wideband low-noise amplifier for 3-5-GHz UWB applications is presented. The circuit was fabricated in a 90-nm CMOS process. It consists of a complementary PMOS / NMOS pair, which provides wideband input matching, while the second stage adopts a transformer-loaded cascode topology. The amplifier achieves a power gain of 13.5 dB and a 3.1-to-5.9-GHz 3-dB gain bandwidth, while it features a noise figure...
Impulse-radio ultra-wideband (I-UWB) systems for sensing and communications offer very low power consumption, and allow precise radar and location sensing alongside with communications. Therefore, they are interesting candidates for medical applications. This paper reports on the development of a complete I-UWB chipset, consisting of pulse generators, low-noise amplifiers, and correlators aiming at...
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