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Wideband gap semiconductor GaN has received increasing attention for its potential for wide variety of high-power, high- performance switching and high-frequency devices application. In this paper the simultaneous annealing effect at a temperature of 400degC ~700degC in N2 ambient for 12 min on aluminum (1500 Adeg) as an ohmic contact while Pt/Ti (700 Adeg/700 Adeg) bilayer as a Schottky contact on...
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