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ZnO films and their Er-doped films oriented in c-axis were prepared on silicon substrate (100) by frequency magnetron sputtering method, and they were taken in heat treatment. Then, the influences on the surface morphologies and crystal structures of the film samples, which were made by the different annealing temperatures and doping concentrations, were analyzed through observing the treatment of...
AuAl alloys prepared by thermal diffusion on p-type silicon (100) substrates were studied. Au/Al bilayers were prepared with 50%:50% as atomic concentration and 100 nm as total thickness. The formed Au/Al/Si systems were annealed from room temperature (RT) to 400??C in a vacuum oven with Argon atmosphere to form the AuAl alloys by thermal diffusion at different times (1, 2, 4 and 6 h). Prepared alloys...
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