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Sputtering from a single CIGS compound target is a promising process to fabricate CIGS absorbers for mass production. However, only few reports demonstrate efficient CIGS cells without post-selenization. The need for the additional post-selenization step may be possibly due to the low Se supply during deposition, which originates from the low Se content in the target. In this study, we proposed a...
The purpose of this study is to understand the relationship between the precursor layer deposited by CuGa-NaF sputtering target and selenidization process. The addition of Na was carried out by using the CuGa-NaF sputtering target. In the CuGa-NaF precursor film, the presence of Na-Ga-F compound was observed. The desorption of fluoride gas from the Na-Ga-F compound occurred, and it accompanied the...
(In,Ga)2Se3 (IGS) thin films were deposited on Molybdenum (Mo) coated soda lime glass (Mo/SLG) substrates, using physical vapor deposition (PVD) technique, resembling only the first stage of the typical 3-stage growth process of CIGS thin film. The Mo thin films were sputtered on SLG substrates using DC planar magnetron sputtering at working gas (Ar) pressure that varies from 0.6 mT to 16 mT. The...
CuInSe2-based solar cells showed long-term stability and the highest conversion efficiencies among thin film solar cells, overcoming 20%. The optoelectronic properties of the absorber layers and interfaces are strongly dependent upon the deposition method and strictly related to the solar cell efficiency. In this work, an alternative approach for CIGS thin film growth has been developed and tested...
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