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This paper presents a Ka-band high isolation single-pole-double-throw (SPDT) switch using 0.13μm CMOS process. The switch has a measured insertion loss of 2.7–3.7 dB and an input 1-dB compression power (P1dB) of 8 dBm at 35 GHz. Via using the shunt NMOS topology and high quality factor match networks, 33–50 dB measured isolation is obtained within the frequency range of 30–45GHz. The switch core occupies...
A 5 GHz, 30-dBm CMOS T/R switch implemented in 90 nm CMOS is reported. A body isolation technique is employed and optimized for power handling capability. Inductors are employed with the transistor switches for parallel resonance to improve isolation. Thick oxide NMOS transistors are used for the switching transistors and placed inside the inductors to reduce the active chip area to approximately...
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