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This document presents a compilation of results from tests performed by iRoC Technologies on SER induced by alpha particles on SRAM memories for technology nodes from 180 nm to 65 nm. The aim of this study is to establish the variation of sensitivity with technology node for SEU and MCU, and to analyze the possible influence of different designs and technological parameters at a given technology node.
Soft errors caused by ionizing radiation have emerged as a major concern for current generation of CMOS technologies and the trend is expected to get worse. Soft error rate (SER) measurement, expressed as number of failures encountered per billion hours of device operation, is time consuming and involves significant test cost. The cost stems from having to connect a device-under-test to a tester for...
This paper proposes a new approach to analyze crosstalk of coupled interconnects in the presence of process variations. The suggested method translates correlated process variations into orthogonal random variables by principle component analysis (PCA). combined with polynomial chaos expression (PCE), the technique utilizes Stochastic Collocation Method (SCM) to analyze the system response of coupled...
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