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A fully monolithic 2times2 (2 a-band, 2 g-band) power amplifier based upon SiGe HBT process is developed for the dual band MIMO 802.11n WLAN system. In order to achieve desirable performances for the 5 GHz band and high integration level, a special through-wafer-via (TWV) process on Si wafer was developed and utilized. In this work, both a-band and g-band PAs show above 17 dBm linear power output...
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