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RF magnetron sputtering gas pressure and substrate temperature on Al-doped ZnO (ZAO) thin film optical performance has important implications. Al-doped ZnO (ZAO) thin films were prepared by RF magnetron sputtering technology. We realized ZAO films with the better performance by adjusting and optimizing the sputtering gas pressure and substrate temperature. Using UV-vis spectrophotometer tested the...
The aluminum-induced crystallization and layer exchange process shows great promise for converting a-Si into large-grained poly-Si for solar cell applications. To investigate the relationship between the grain size of Al and the final grain size of poly-Si, a series of samples were deposited by RF magnetron sputtering 165 nm of Al onto SiN/SiO2 coated (100) silicon substrates. The Al grain size was...
Multilayer oxide thin film stacks of aluminum doped zinc oxide (AZO) and tin doped indium oxide (ITO) have been sequentially deposited on soda lime glass substrates by RF sputtering of AZO and ITO ceramic targets at a substrate temperature of 150??C. The ratio of the AZO thickness to the ITO thickness is varied while keeping the total thickness of the stack constant. The electrical and optical properties...
Al-doped ZnO (ZnO:Al or AZO) films have successfully been fabricated on large area glass substrates by sputtering Zn-Al metallic targets (Al content 1-2 wt%) in an in-line reactive mid-frequency (MF) magnetron sputtering process. A new target technology (CleanMag/spl trade/) based on moving magnets as well as conventional target technology (TwinMag/spl trade/) were utilized. The dependence of microstructure...
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