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Thin film GaN growth on c-plane sapphire (0001) substrate using two-step method by nitrogen plasma assisted MBE is reported. After growth optimization, a low temperature buffer layer was grown followed by the main GaN thin film. The Optical and structural properties of the film were investigated using XRD, Raman spectroscopy, Photospectrometry and in-Situ RHEED. The polycrystalline nature of the grown...
The growth of quaternary AlInGaN epitaxial layer on GaN/sapphire substrates by metalorganic chemical vapour deposition is reported. It was found that AlInGaN layers were grown three dimensionally with rough surface at low temperatures and transferred to smooth two-dimensional growth at 860degC. It was also found that In mole fraction in the layers decreased significantly as the AlInGaN growth temperature...
GaN has attracted great interest world wide during these years. Epitaxial growth technique such as epitaxial lateral overgrowth (ELO) has been proved to be a very effective way to produce a high-quality GaN layer, so many studies made researches on this field. In this work, GaN was deposited on sapphire c side (0001) wafers as the ELO theory without mask by metal organic chemical vapor deposition...
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