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The work presented here shows the effect of annealing temperature on CuI thin films. The 0.05 mol of CuI solution is prepared at room temperature and then deposited in silicon and glass substrate. The CuI thin films were deposited using sol-gel spin coating method. The electrical, optical properties and surface morphology was characterized by current-voltage (I-V) measurement, ultraviolet-visible...
Polycrystalline films of semiconducting Cu(In1-xGax)Se2 (CIGS) quaternary alloy, one of the promising materials for photovoltaic applications, have been prepared by means of chemical spray pyrolysis (CSP). Copper, Indium and Gallium metal chlorides and Selenourea are used as constituent elements to prepare spray solution. Single phase CIGS films with chalcopyrite structure have been successfully grown...
CuInS2 thin films have been prepared by one-step DC reactive sputtering process. Full characterizations have been carried out by EDS, XRD, SEM, optical transmittance and electrical measurement. XRD and SEM analysis of the films show that the crystallinity and morphology could be improved by altering the composition of the films to stoichiometric. The band gaps of samples with different Cu/In ratio...
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