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The benefit of La-Al-O higher-k gate dielectrics is maximized by optimizing the Al/(La+Al) atomic ratio. The Al/(La+Al) atomic ratio modulates the band gap, dielectric constant, and interface dipoles, resulting in change of energy band alignment. The La-Al-O film with an Al/(La+Al) atomic ratio of 0.25 yields a maximum leakage current reduction exceeding HfO2 and La2O3, owing to the optimized band...
In this work 7 nm thin Ta2O5/SiOxNy insulating stacks on Si were studied by a combination of C-V If and leakage current (I-V) measurements, based on the comprehensive model involving different conduction mechanisms in Ta2O5 and the interfacial SiOxNy layer. Equivalent oxide thickness (EOT) was determined using the extrapolation method for leaky high-k dielectrics proposed by Kar. Interface state densities...
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