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Photonic devices operating in the mid-IR (3 μm to 13μm wavelength range) are of great interest for a wide range of applications, such as free-space communications, environmental monitoring or defence. Group IV-based material platforms [1], such as silicon-on-insulator (SOI)[2] and silicon-on-sapphire (SOS)[3] have attracted significant interest for mid-IR integrated photonics. However, absorption...
Silicon slot waveguides that can operate at the wavelength of high material absorption are prepared on SOI wafer. The measured transmission loss coefficient could be as low as 1.07–2.62dB/mm at the wavelength of 1064nm.
The Si3N4 waveguide offers very low propagation loss and feasibility for three-dimensional photonic integration, but it suffers from large optical mode size (thus low integration density) due to the relatively small refractive index contrast between the Si3N4 core and the SiO2 cladding. On the other hand, the metal-insulator-metal plasmonic waveguide offers very tight light confinement but it suffers...
A combined planar lossless optical amplifier and 1 ?? 2 power splitter device has been realized in Al2O3:Er3+ on silicon. Net internal gain was measured over a wavelength range of 40 nm across the complete telecom C-band (1525-1565 nm). Calculations predict net gain in a combined amplifier and 1 ?? 4 power splitter device over the same wavelength range for a total injected pump power as low as 30...
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