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Highly c-axis oriented 1000 nm thick AlN films having full width at half maximum (FWHM) of the X-ray rocking curve 1.2 degrees were deposited on Mo underlayers by ac reactive magnetron sputtering at various process conditions. AFM, SEM, TEM, HR-XRD, and defect selective chemical etching were used to characterize the microstructure of the AlN films. It was found that the Ar pressure during the Mo deposition...
Highly c-axis-oriented and fine structural AIN films were successfully prepared on Langasite substrate (LGS, La3Ga5SiO14) by RF magnetron sputtering. The crystalline structure of the films was determined by X-ray diffraction (XRD) and the surface microstructure of films was quantitatively investigated by using scanning electron microscope (SEM) and atomic force microscope (AFM). Different sputtering...
AlN thin film has been deposited on the Si wafer and the Al/sub 2/O/sub 3/ substrate by reactive radio frequency (RF) magnetron sputtering method under various operating conditions such as working pressure and fraction of nitrogen partial pressure. Scanning electron microscope (SEM), X-ray diffraction (XRD), atomic force microscope (AFM) have been measured to investigate structural properties and...
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