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The DARPA Diverse Accessible Heterogeneous Integration (DAHI) program is developing transistor-scale heterogeneous integration processes to intimately combine advanced compound semiconductor (CS) devices, as well as other emerging materials and devices, with high-density silicon CMOS technology. This technology is currently enabling RF/mixed signal circuits with revolutionary performance. For example,...
We have demonstrated that back-end-of-line (BEOL) processing can successfully be performed in a university environment on die that have been fabricated at a foundry. This processing option enables universities to integrate state-of-the-art feature sizes with low resolution photolithography capabilities, such as achieved with a contact aligner, typically available at universities. With this capability,...
This letter proposes a compact layout of the dynamic threshold-voltage MOS (DT-MOS) transistor using foundry 90-nm CMOS technology. Adopting the subcircuit of source follower, the proposed DT-MOS transistor could be operated at voltage as low as 0.7 V. Measurement results demonstrate the 80% improvement of current drive capability and the 60% improvement of transconductance compared to traditional...
A fully monolithic oscillator achieved via MEMS-last integration of low temperature nickel micromechanical resonator arrays over finished foundry CMOS circuitry has been demonstrated with a measured phase noise of -95 dBc/Hz at a 10-kHz offset from its 10.92-MHz carrier (i.e., output) frequency. The use of a side-supported flexural-mode disk resonator-array to boost the power handling of the resonant...
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