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This letter proposes a compact layout of the dynamic threshold-voltage MOS (DT-MOS) transistor using foundry 90-nm CMOS technology. Adopting the subcircuit of source follower, the proposed DT-MOS transistor could be operated at voltage as low as 0.7 V. Measurement results demonstrate the 80% improvement of current drive capability and the 60% improvement of transconductance compared to traditional...
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