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Channel Hot Carrier (CHC) and Negative Bias Temperature Instability (NBTI) degradation has been studied in pMOSFETs with and without channel strain. The results show larger CHC degradation and a neglegible influence of NBTI on strained pMOS devices. The degradation effects are modeled to be introduced in a circuit simulator. The simulations of a CMOS inverter, which has been chosen as example circuit,...
The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically,...
The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically,...
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