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Recent dramatic advances in the development of large area silicon carbide (SiC) MOSFETs along with their companion JBS diode technology make it possible to design and fabricate high power SiC switch modules. An effort underway by the Air Force Research Laboratory has lead to the development of a 1.2 kV/100 A SiC dual switch power module capable of operating at a junction temperature of 200degC. Two...
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