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The SiO2 passivation using the inductively coupled plasma-chemical vapor deposition(ICP-CVD) was proposed for the high voltage AlGaN/GaN Schottky barrier diode(SBD). The ICP-CVD is well known for the high-density remote plasma, so this method reduces the plasma damage on the surface of semiconductor. Experimental results showed that the SiO2 passivation improved the electrical characteristics of AlGaN/GaN...
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