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RF power, when approaching the handling capacity of microelectromechanical capacitive switches, was found to accelerate both the charging and discharging of the dielectric in the switches. The amount of acceleration appeared to be greater than what could be explained by self biasing and self heating. Since the long-term reliability of the switches is limited by dielectric charging, the RF power-handling...
Dielectric windows often limit the power handling capability of vacuum electron devices. It is necessary to choose the right dielectric material for high power applications. Depending upon the power level, a range of materials has been used in various systems. The ideal material should have high mechanical strength, high thermal conductivity, high electrical breakdown voltage, low dielectric loss,...
Polycrystalline Fe3O4 films were plated on glass substrates in an aqueous solution. By irradiating the substrate surface with an Xe lamp at power density of ~450 W/cm2, the deposition rate of Fe3O4 film was increased by a factor of about 10 (from ~30 nm/min to ~320 nm/min). With light irradiation times as short as 4 min, we obtained ferrite films of ~2 ??m thickness. We believe that the light accelerates...
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