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Effects of silicon nitride (SiN) surface passivation by plasma enhanced chemical vapor deposition (PECVD) on microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon (HR-Si) substrate have been investigated. About 25% improvement in the minimum noise figure (NFmin) (0.52 dB, from 2.03 dB to 1.51 dB) and 10% in the associate gain (Ga) (1.0 dB, from 10.3 dB to 11.3 dB) were observed...
An increased RF-performance of heterojunction field-effect transistor was found to be due to passivation and in addition a SiO2 insulation underneath the gate metallization. This leads to an increase of cutoff frequency from 17 GHz up to 24 GHz for devices with 500 nm gate length. The RF output power increased from 4.1 to 6.7 W/mm at 7 GHz. RF simulation based on measured S-parameter showed a decrease...
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