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Ge Nanocrystallites (nc-Ge) have been formed by 250 keV Ge+74 implantation at fluences of [0.5; 0.8; 1; 2; 3; 4]times1016 atoms/cm2 into 300-nm-thick SiO2 layer thermally grown on p-type Si (100) substrate, followed by thermal treatment at 1000 degC in forming gas atmosphere for 1 hour. All the samples show a broad Raman spectrum with fluences variation as function of the shift Raman. Ge+-dose dependence...
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