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L10 ordered FePt alloy shows Ku greater than 107 erg/cm3 along the c-axis and the thin films have been investigated for applications like recording media, MRAM devices, etc.
A novel low temperature wafer-level Cu-Cu bonding method using Ag nanoparticles (NP) was proposed and realized in this paper. A bonding structure consisted of Cu bonding pads, TiW barrier/adhesive layer was firstly fabricated on the silicon wafer. Ag NPs were then deposited by physical vapor deposition (PVD) on Cu pads. The morphology of Ag NPs annealed at different temperature was studied. Bonding...
Despite decades of research, achieving high sensitivity for chemical sensors still remain a challenge. This paper presents a technique for fabricating nanostructured TiO2 Schottky diodes with a large surface area for chemical sensing applications. The technique is based on hydrothermal synthesis, where the crystallographic phase and surface morphology of the sensing film can be controlled via NaOH...
In this study, sandwich structures of Ni/Sn/Ni was prepared by a general electroplating process. A high temperature storage test was conducted by isothermal aging at 180°C. Microstructure characterizations revealed that after 24 hours of heat treatment, the Sn solder consumed completely. Cross-sectional microstructure showed large voids was left among the IMC. The ratio of Voids is much beyond −11...
To understand the capabilities and limitations of the multicycle rapid thermal annealing (MRTA) process, the key features of the process must be systematically explored. This work is dedicated to a study of the first step in the MRTA process — conventional annealing. A fundamental study was performed to determine the optimal conventional annealing temperature for the MRTA process by monitoring crystal...
Through silicon via (TSV) is regarded as one of the most advanced packaging technologies, however, many serious reliability issues need to be paid more concerns. The Cu pumping effect is one of the most crucial reliability problems. Due to different coefficient of thermal expansion for different packaging materials, Cu-TSV can deform and damage the wiring redistribution layers and degrade the reliability...
We studied the preparation of the clean Si(111) surface in H2 ambient with in situ reflection anisotropy spectroscopy and UHV-based surface science tools after contamination-free transfer. X-ray photoelectron spectroscopy confirmed complete oxide removal after high-temperature annealing. In situ RAS enabled observation of the oxide removal in dependence of process temperature. Monohydride termination...
Bimetals (Na, Mg, Li, Cr) doped nanotitania was prepared using a modified hydrothermal method from a titanium mineral. The samples, along with a commercial sample, were then annealed from 873 K to 1273 K, at 100 K intervals. Both samples were characterized using a variety of methods such as the XRD (crystallite size and phase conversion temperature), SEM (morphology) and BET (surface area). It was...
The work presented here shows the effect of annealing temperature on CuI thin films. The 0.05 mol of CuI solution is prepared at room temperature and then deposited in silicon and glass substrate. The CuI thin films were deposited using sol-gel spin coating method. The electrical, optical properties and surface morphology was characterized by current-voltage (I-V) measurement, ultraviolet-visible...
TiO2 nanotube layer was prepared by anodic oxidation of commercial pure Ti in aqueous solutions containing 1M (NH4)2SO4 and 0.5 wt% NH4F. The as-anodized layer consists of self-organized TiO2 nanotubes with amorphous structure, which transforms to anatase after annealing at 450 ??C for 3 h. The annealing treatment of the nanotube layer can significantly enhance its hydrophilicity and bioactivity....
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