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An experimental study of transient latchup is conducted. Measurements are performed on test structures fabricated in 90-nm and 130-nm CMOS technologies. The worst case testing conditions differ for static and transient latchup. Device simulation is used to understand the measurement results. P-well and N-well guard rings are evaluated under transient test conditions.
Low-cost testing of integrated RF substrates is necessary to reduce their production cost. In this paper a new low-cost test approach is proposed for testing an integrated RF substrate with embedded RF passive filters. As compared to a conventional test method the proposed test method reduces the test-setup cost by around 40%. The proposed method enables testing of embedded RF filters by one-port...
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