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Novel 1310 nm and 1550 nm optically pumped VECSELs based on wafer fused InAlGaAs/InPAlGaAs/GaAs gain mirrors demonstrate high CW fundamental mode continuous wave output in excess of 2 W at room temperature.
A new generation of 10 Gb/s wafer fused VCSELs show high single mode output in excess of 2 mW at 80degC (6 mW at 20degC) in the 1310 nm band and 1.5 mW at 80degC (4 mW at 20degC) in the 1550 nm band. Error free transmission over 10 km of standard single mode fiber was performed with less than 1 dB penalty.
InAlGaAs/AlGaAs-based wafer-fused long-wavelength VCSELs with tunnel junction injection emitting in the 1310 nm and 1550 nm bands show high single-mode output and high speed modulation capabilities of 10 Gbps. Fundamental emission close to 6 mW at room temperature and 2.5 mW at 80??C for both 1310 nm and 1550 nm devices is demonstrated for the first time.
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