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Optical properties of strain‐compensated InGaN/InGaN quantum well (QW) structures using a InGaN substrate are investigated using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures using a GaN substrate. The strain‐compensated QW structure shows that a smaller well thickness is needed to obtain the transition wavelength of 530 nm than...
We studied and improved gallium nitride (GaN) nanowire (NW) based light emitting diodes (LEDs). PIN nanodiodes with and without InGaN/GaN multiple quantum wells (MQWs) were grown by molecular beam epitaxy (MBE) under N‐rich conditions on n‐doped Si(111) substrates. Thanks to the coalescence of the p‐type region of the NWs grown at low temperature, an autoplanarization process has been performed to...
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