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Amorphous silicon-germanium films were prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) on the glass. The structural characteristics, deposition rate, optical band gap and photosensitivity of the silicon-germanium thin films had been investigated at different substrate temperatures. It indicated that the substrate temperature had nothing to do with the crystallization...
The aim of this study is to optimize a low cost phosphorus diffusion process suitable for pn junction formation on extremely thin (<;100um) c-Si solar cells. The deposition of the doping layer has been carried out by spray coating of commercial and non-commercial precursors. There have been monitored sheet resistance, effective lifetime and oxygen content in the prepared emitters.
p-microcrystalline-silicon/n-crystalline-silicon hetero-junction solar cell has been prepared by means of hot-wire chemical vapor deposition (HW-CVD) technique. The solar cell structure was illuminated on the opposite side of the normally-formed heterojunction. With this inverted structure, the photovoltaic cell has the design potential increasing the light-incident surface texturing and it avoids...
Polycrystalline films of semiconducting Cu(In1-xGax)Se2 (CIGS) quaternary alloy, one of the promising materials for photovoltaic applications, have been prepared by means of chemical spray pyrolysis (CSP). Copper, Indium and Gallium metal chlorides and Selenourea are used as constituent elements to prepare spray solution. Single phase CIGS films with chalcopyrite structure have been successfully grown...
Indium Tin Oxide (ITO) film is evaporated on the PEN film using MirrorTron Sputtering system, which is a new sputtering system enabling sputter deposition at a low temperature, separating a sputtering chamber and a deposition chamber. As a result, a uniform ITO thin-film deposition with a film thickness of 150 nm is enabled. This ITO thin-film is chemically analyzed using Focused ion beam and X-ray...
Transparent conducting indium-tin oxide (ITO) thin films play a very important role in the field of optoelectronic devices such as photovoltaic cells and flat panel display devices. ITO films display low electrical resistance and high transmittance in the visible range of the optical spectrum. ITO thin films were deposited using a magnetron sputtering with a microwave source to improve the plasma...
Wide-bandgap (AgCu)(InGa)Se2 absorber layers with Ga/(In+Ga) = 0.8 were deposited by a three-stage co-evaporation process using varying Se incident flux and stage-one substrate temperature. Films exhibited preferential (204)/(220) orientation and a Ga-deficient notch near the surface, both characteristics analogous to previously reported Cu(InGa)Se2 films deposited using the same process. Increasing...
In order to achieve a high efficient a-Si solar cell, the TCO (transparent conductive oxide) substrates are required to be a low sheet resistivity, a high transparency, and a textured surface with light trapping effect. Recently, a zinc oxide (ZnO) thin film attracts our attention as new coating material having a good transparent and conductive for TCO of solar cells1-2.
Titanium Dioxide (TiO2) thin film has been synthesized using sol-gel method and deposited onto glass substrates using spin coating technique. These thin films are then annealed at various temperatures. The electrical and structural characterizations of the as deposited and annealed films were carried out using IV measurement with 4-point probe equipment and scanning electron microscopy (SEM). From...
We have grown Si/Ge nanodot superlattices via low-pressure chemical vapor deposition in order to analyze their performance as thin-film solar cells. Self-assembled Ge nanodots are included in the base region in order to boost absorption of near-infrared photons and to increase short-circuit current density, Jsc. At a relatively low dot density of 5.5 ?? 109 cm-2, both 20- and 40-period cells exhibited...
Nitrogen-doped TiO2 (TiO2-xNx) is a promising semiconductor for potential applications in photocatalysis and dye sensitized solar cell (DSSC). However, one of the key challenges for this material is fabricating thin film devices using cost-effective and time-saving routes. To tackle this issue, we have developed a simple one-step, low temperature method for synthesising mono-dispersed colloids of...
CuInSe2 (CIS) thin films were prepared by ion-beam sputtering at different substrate temperatures. The films prepared at room temperature were annealed at different temperatures. Films annealed at appropriate temperatures are dense, uniform and of single-phase.
Al-doped ZnO thin films as a front electrode of silicon pin solar cells were prepared on the glass substrates by rf magnetron sputtering in which working pressure and substrate temperature were controlled precisely. After film deposition, the films were etched by dilute acid solution to obtain the textured surfaces. Material properties of the deposited films were investigated by various analytical...
Cu(In,Ga)Se2 (CIGSe) thin film solar cells are the most efficient thin film photovoltaic technology available. Deposited onto the appropriate substrate they are potentially flexible, very light, robust and low cost. Due to their excellent radiation hardness and potentially high specific power, they have also attracted interest for use in space applications. Highest quality CIGSe absorber layers are...
We have made CdS/CdTe solar cells on polyimides from different sources. These cells were fabricated using sputtered zinc oxide doped with aluminum as the transparent conducting oxide. The CdS and CdTe were also deposited by sputtering. In this paper we report properties of the sputtered AZO and its changes with CdCl2 heat treatments. We have achieved a cell efficiency of 10.5% at air mass 1.5G illumination.
We investigate earth abundant materials for thin-film solar cells that can meet tens of terawatts level deployment potential. Candidate materials are identified by combinatorial search, large-scale electronic structure calculations, and literature reviews. We identified cuprous oxide (Cu2O) as a prototype candidate for investigation as an absorber layer in thin film solar cells. Cu2O thin films are...
In this work, we present a systematic investigation of the influence of mixed-phase TiO2 with various a-TiO2 to r-TiO2 ratio (A/R) toward the DSSCs efficiency. It was found that though a-TiO2 showed better performance than r-TiO2 in DSSCs, the Ru-bipyridine dye (N719) sensitized TiO2 films fabricated by mixed-phase TiO2 with A/R = 9 gives the highest cell efficiency.
The cost of photovoltaic (PV) energy generation has been steadily reduced with the increase of solar cell power conversion efficiency and the drop of manufacturing cost. An effective way of lowering the cost of Si thin film solar cells is to increase the solar panel size by growing thin films on large area substrates, where it is important to maintain uniform film properties to ensure efficient and...
Solar cells based on polycrystalline Cu(In,Ga)Se2 (CIGS) absorber layers have shown high potential for low cost photovoltaic energy conversion. Our group has achieved 18.1% efficient cells on glass substrates and 14.1% on flexible polyimide foils without antireflection (AR) coating. These results were achieved by applying a three-stage evaporation process with common growth rates of about 35 nm/min...
AlSb thin films have been electrodeposited on mesoporous TiO2 on ITO (In2O3:SnO2) coated glass surface. The reduction potential of aluminum and antimony from a solution of SbCl3 in an AlCl3/EMIC ionic liquid and SbCl3 was determined by cyclic voltammetry to be -0.62 V and 0.54 V respectively. The deposition of AlSb compound was accomplished by reversing the reduction pulsed potential cycles. Thin...
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