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This paper designs a Low Noise Amplifier (LNA) used in RF front end receiver system for wireless sensor network applications. The proposed LNA adopt post distortion technique. This Low Noise Amplifier provides a low noise figure of 2.14 dB with a forward gain of 16.6dB. The LNA circuit consumes a power of 11.6mW for 1.8V supply. The circuit is implemented using 180nm CMOS technology.
Performance of the low-noise amplifier (LNA) determines the sensitivity, impedance matching (reflection), and other critical parameters of the receiver. Carrier aggregation (CA) in LTE-Advanced and upcoming 5G requires the LNA to support multiple-outputs without degrading its dynamic range (DR) performance and thus requires the architectural changes. In this paper, several LNA topologies are presented...
In this paper, performance analysis of Microstrip based RF subsystems such as impedance transformer, and low noise amplifiers (LNA) are presented in 180 nm CMOS technology employing MS (microstrip) transmission lines. The frequency of operation is 5 GHz. The impedance transformer is designed using coupled microstrip lines for better impedance matching providing return losses of −24.819dB. A modified...
This paper presents the design of a low noise amplifier in 0.13-μm CMOS technology. The conventional inductive degeneration is applied to reduce the noise figure. The amplifying stage uses the cascode structure to increase the gain and achieve a better isolation. Operated at 1.2V, the simulated gain of the LNA is better than 20 dB while the noise figure is less than 1.8 dB with the bandwidth from...
In addition to LNA (low noise amplifier) noise figure, gain and input matching, its linearity is also an important consideration. An LNA must amplify signal without adding too much noise but also remain linear even when strong signals are received. In the narrowband LNA topology, good values of S-parameters and noise performance are achieved at the expense of linearity. In order to improve LNA linearity,...
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