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Three dimensional memory systems has been argued as a potential pathway in solving the ever growing difference between comparative speeds of CPU and memory systems. In this paper, we describe a three-tier, three-dimensional SRAM macro that has been designed and fabricated in a 0.18 um FD-SOI CMOS technology. 3D stacking is found to improve wire latency as compared to planar memory structure although...
This paper studies the impact of intra-die random variability on low-power digital circuit designs, specifically, circuit timing failures due to intra-die variability. We identify a new low-Vdd statistical failure mode that is strongly supply-voltage dependent and also introduce a simple yet novel method for quantifying the effects of process variability on digital timing - a delay overlapping stage...
For several decades, the output from semiconductor manufacturers has been high volume products with process optimisation being continued throughout the lifetime of the product to ensure a satisfactory yield. However, product lifetimes are continually shrinking to keep pace with market demands. Furthermore there is an increase in dasiafoundrypsila business where product volumes are low; consequently...
A variable-radix digit-serial design methodology and its application to the implementation of a systolic structure for computing the discrete cosine transform is presented. Based on the parameters supplied by a user, different fixed-point designs can be derived from a single floating-point description where tradeoffs among quantization effects, throughput, latency, and area can be addressed. The resulting...
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