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Described in this paper are unified design and electronic lithography-based technology of production of low-noise Schottky FETs. HEMT and PHEMT series for 3-60 GHz frequency band have been manufactured.
The authors report the design, fabrication, and characterization of ultra-high-speed 0.15- mu m mushroom gate Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As modulation-doped field-effect transistors (MODFETs) with current gain cutoff frequency (f/sub T/) over 150 GHz. It is demonstrated that with proper device design and fabrication techniques, the switching speed of the AlGaAs/InGaAs (on GaAs)...
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