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This paper presents a characterization method to determine specific contact resistance of metal–semiconductor point contacts on a highly doped silicon. The method uses a symmetrically doped silicon wafer with full area contact on the front side and point contacts on the rear side. The specific contact resistance of point contacts is determined by measuring the resistance of the sample for various...
We present the effect of active carrier concentration on the specific contact resistivity (ρc) of in-situ molybdenum (Mo) Ohmic contacts to n-type InAs. It is observed that, although the Fermi level pins in the conduction band for InAs, the contact resistivity decreases with the increase in InAs active carrier concentration. The lowest ρc obtained through transmission line model measurements was (0...
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