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InAs/AlSb/AlGaSb heterojunction backward diodes are promising detectors for millimeter-wave imaging applications due to their high sensitivity, low noise, and high cutoff frequency. By using a device heterostructure with a thin (11 Å) barrier layer, δ-doped cathode, and optimized AlxGa1-xSb anode composition (x=12%), in conjunction with submicron (0.4×0.4 μm2) active area, fabricated detectors have...
New zero-bias Schottky diodes with low junction capacitance and low differential resistance are characterized by applying DC and S-parameter measurements from 65–110 GHz. Diode versions with short and open circuits at the diode's anode as well as biased measurements of the diode allow an advanced investigation to model the diode's equivalent circuit. The extracted parameters provide an accurate RF...
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