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Accurate and useful compact models of parasitic resistance of resistors for analog circuits are proposed. The model is applicable to any layout patterns and topologies normally used in analog circuits. In addition, test structures to measure the parasitic resistance correctly are shown and the models are validated for a 40nm CMOS technology.
Three dimensional memory systems has been argued as a potential pathway in solving the ever growing difference between comparative speeds of CPU and memory systems. In this paper, we describe a three-tier, three-dimensional SRAM macro that has been designed and fabricated in a 0.18 um FD-SOI CMOS technology. 3D stacking is found to improve wire latency as compared to planar memory structure although...
An on-chip buck converter with 3D chip stacking is proposed and the operation is experimentally verified. The manufactured converter achieves a maximum power efficiency of 62% for an output current of 70mA with a switching frequency of 200MHz and a 2x2mm on-chip LC output filter in 0.35mum CMOS. The use of glass epoxy interposer to increase the maximum power efficiency up to 71.3%, and the power efficiency...
To increase memory bandwidth with minimum area overhead, the new concept of 3D-stacked memory structure consisting of a small sense amplifier shared with a few 3D memory cells has been presented. The 16 bit 3D-stacked TiO2 memory chip was fabricated and demonstrated. The estimated bandwidth per unit area of 3D-stacked memory in sub-65 nm CMOS technology indicates that the 3D-stacked memory has potential...
Post-treatment of the sensing film in tin oxide gas sensor arrays is widely used to improve the selectivity in gas recognition applications. This letter describes the characterization study of an integrated tin oxide gas sensor array chip in which the sensing films are modified using metal additives and ion implantations. Measurement results reveal that metal additives present a higher impact on the...
A layout design algorithm of a variable-width transformer is proposed to minimize metal resistance in this letter. The proposed algorithm can rapidly design metal widths in each coil of a planar transformer for a given chip area. Two on-chip transformers with identical self-inductance are fabricated to verify the proposed algorithm in 90-nm CMOS technology. Measurement results demonstrate the improvement...
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