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Si 2p and N 1s spectra arising from a oxynitride film formed on Si(100) surface were measured in the photon energy range from 556 to 1471eV, where the electron escape depth in SiO 2 changes from 1.68 to 3.80nm. It was found for the first time that the photon energy dependence of N 1s and Si 2p photoelectron spectra can be nearly reproduced if the depth profile of nitrogen atoms is known.
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