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Mechanical stresses induced by the mismatch of coefficient of thermal expansion (CTE) among different materials are the major driving force of fracture failures in silicon dies of microelectronic packages. The stresses induced are concentrated at locations where different materials interfaced and geometrical singularities such as die corners and die edges. Stress analyses using finite element mechanical...
The reliability of semiconductor devices and packages used in microelectronics is compromised by interfacial delamination and homogenous cracking that is initiated at the edge of the interface between dissimilar materials during processing and stress tests. These failures have certain characteristics in that they begin at the stress singularity point. The knowledge of interfacial fracture mechanics...
Proposes that the critical stress intensity factor in linear elastic fracture mechanics, K/sub IIC/, obtained in an adhesion test between the leadframe and the mold compound can be used as a criterion for predicting delamination. A finite element stress analysis of the adhesion test determines K/sub IIC/ corresponding to the measured maximum strength. Delamination between the leadframe chip pad and...
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