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In this article, we report an extensive study of mass density variations with increasing thickness of many nanofilms (Al, AlN, Cr, Cu, SiC, SiO2, Si3N4 and ZnO) deposited on several substrates (MgO, quartz and stainless steel). From, the analysis and the results quantification, it was found that the mass-density dependence showed dispersive behaviours: increasing layer thickness leads to an initial...
Highly c-axis oriented 1000 nm thick AlN films having full width at half maximum (FWHM) of the X-ray rocking curve 1.2 degrees were deposited on Mo underlayers by ac reactive magnetron sputtering at various process conditions. AFM, SEM, TEM, HR-XRD, and defect selective chemical etching were used to characterize the microstructure of the AlN films. It was found that the Ar pressure during the Mo deposition...
Aluminium nitride (AlN) thin films were deposited on a polycrystalline (poly) 3C-SiC layer by a pulsed reactive magnetron sputtering system. The columnar structure of AlN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC layer was 9.3 nm. The X-ray diffraction pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum of the...
Highly c-axis-oriented and fine structural AIN films were successfully prepared on Langasite substrate (LGS, La3Ga5SiO14) by RF magnetron sputtering. The crystalline structure of the films was determined by X-ray diffraction (XRD) and the surface microstructure of films was quantitatively investigated by using scanning electron microscope (SEM) and atomic force microscope (AFM). Different sputtering...
Highly (002) oriented aluminum nitride (AlN) films were successfully prepared on a 64deg-YX LiNbO3 substrate by r.f. magnetron sputtering. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the surface microstructure of films was investigated by Scanning electron microscope (SEM). The atom composition ratio (Al/N) of the films was also determined...
Aluminum nitride (AlN) thin film bulk acoustic resonator was fabricated using silicon bulk micromachining technique with highly c-axis oriented piezoelectric cell. AlN piezoelectric films were deposited on both platinum (Pt) and gold (Au) bottom electrodes under optimized sputtering condition for comparison. The measurement results of X-ray diffraction, scanning electron microscope, and atomic force...
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