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We report on the phonon-limited hole mobility of ultra-narrow Si nanowire (NW) channel transistors as a function of inversion charge density. We employ atomistic bandstructure calculations and linearized Boltzmann transport theory and examine NWs of 12 nm in diameter in [100], [110], and [111] transport orientations. We show that the curvature of the bands in the [110] and [111] NWs increases significantly...
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