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A 20 band sp3 d5 s* spin-orbit-coupled, semi-empirical, atomistic tight-binding (TB) model is used with a semi-classical, ballistic transport model, to theoretically examine the bandstructure carrier velocity under non-degenerate conditions in silicon nanowire (NW) transistors. Infinitely long, uniform, cylindrical and rectangular NWs, of cross sectional diameters/sides ranging from 3nm to 12nm are...
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