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Demonstration of Al0.3Ga0.7N PN diodes grown with breakdown voltages in excess of 1600 V is reported. The total epilayer thickness is 9.1 μm and was grown by metal-organic vapour-phase epitaxy on 1.3-mm-thick sapphire in order to achieve crack-free structures. A junction termination edge structure was employed to control the lateral electric fields. A current density of 3.5 kA/cm2 was achieved under...
Conductance, susceptance, reactance, quality factor and noise factor of Si09Ge01IMPATT diode are numerically computed using double iterative method and modified Runge-Kutta method when device is operated at millimeterwave frequency region. Poisson's equation, carrier diffusion equation and continuity equation are simultaneously solved are in presence of mobile space charge subject to the appropriate...
We analyze the effects of doping, traps and other defects on the electronic properties of organic/polymeric diodes. We detect the presence of dopant atoms and traps in the semiconductor in experimental current density-voltage (j-V) curves by the comparison with numerical j-V curves. The transport equations are solved by means of the Lambert-W-function. The key parameter in the procedure is the boundary...
Numerical computation of p+nn+ SDR IMPATT structure is carrier out at X-band and Ka-band by double iterative method involving simultaneous solution of Poisson's equation, continuity equation and space-charge equation subject to appropriate boundary conditions for electric field and normalized current density at depletion layer edges. Temperature-dependent two-step impact ionization process is considered...
The edge of the active area and termination structure have a decisive influence on the recovery safety operating area (SOA) of High Voltage (HV) freewheeling diodes (FWDs). We have investigated the HV planar anode diode that breaks the triangle trade-off limitations between the overall loss, the reverse recovery softness and the recovery SOA. Our results show the destruction phenomena during the recovery...
The effect of mobile space charge on the high frequency properties and performance of DDR p+ p n n+ wurtzite GaN IMPATT diodes at terahertz frequency has been investigated. The studies are based on modeling and computer simulation method developed by the authors. The high frequency properties of DDR IMPATTs based on GaN at terahertz frequency regime are not available in the literature. It is observed...
Computer simulation has been carried out to investigate the effect of punch through on the breakdown properties such as peak electric field, breakdown voltage and DC-to-RF conversion efficiency of 4H p+nn+ SiC Impatts. The effect of mobile space charge and diffusion has been incorporated in the analysis. The results indicate increase of junction field at breakdown with sharp decrease of breakdown...
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