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Al-doped ZnO films with different Al concentrations were prepared on freestanding diamond (FSD) substrates by radio-frequency (RF) reactive magnetron sputtering method. The effects of Al concentrations and annealing process on the structural and electrical properties of the ZnO films were studied by X-ray diffraction (XRD) and Hall effect measurement system respectively. The experimental results suggested...
The precursor Zn3N2 films were deposited on quartz glass substrates by reactive DC magnetron sputtering and oxidized in situ at various temperatures by introducing pure oxygen gas directly into the deposition chamber. X-ray diffraction (XRD), scanning electron microscopy (SEM), UVNIS transmittance, Hall-effect measurements and photoluminescence (PL) were carried out to investigate the structural,...
Vanadium doped ZnO films with the doping concentration of 0.8% were deposited onto glass substrates at different sputtering pressures by direct current (DC) reactive magnetron sputtering using a zinc target doped with vanadium. The effect of the sputtering pressures (5*10-3 - 3*10-2 mbar) on the structural properties of the deposited films have been studied by X-ray diffraction (XRD), scanning electron...
Aluminum-doped zinc oxide (ZnO:Al) films were deposited by RF magnetron on p-Si(111) substrates to fabricate Al-doped/p-Si heterojunctions. The structural and electrical properties of the Al-doped ZnO films were characterized by X-ray diffraction spectroscopy (XRD), scanning electron microscopy (SEM) and Hall effect measurement, respectively. The results show that Al-doped ZnO thin films have high...
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