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In this work, we provide a detailed electrical and physical characterization of the over-reset (OR) state in terms of amorphous volume shape/thickness, activation energy for conduction, time drift exponent, 1/f noise intensity and threshold voltage. Experimental data are compared with simulations accounting for both the transport and switching mechanisms. Comparison highlights that OR is due to a...
Threshold switching effects play a critical role in phase change memory (PCM) devices, since they contribute to the programming (set/reset) times and may lead to unwanted disturbs during the read operation. This work presents a detailed characterization and modeling of transient effects of delay, switching and recovery in PCM devices, allowing to quantitatively evaluate the statistical impact of read...
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